IRF1310NSTRLPBF vs IPB100N12S305ATMA2 比較
詳細並排比較 IRF1310NSTRLPBF 由 Infineon 與 IPB100N12S305ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF1310NSTRLPBF | IPB100N12S305ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | 73.3 nC | — |
| Power Dissipation (PD) at TC=25C | 160 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| 工作溫度範圍 | -55C to +175C | -55 °C to +175 °C (TJ) |
| 封裝 | D2PAK (TO-263AB) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | IR MOSFET (HEXFET) | — |
| Built-in Diode | Yes (intrinsic body diode) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Configuration | Single with built-in diode | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 120V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Power Dissipation (PD) at Tc | — | 300 W |
| Drain-Source On-Resistance RDS(on) | — | 0.0048 ohm (4.8 mΩ) at VGS=10 V |
| Maximum Junction Temperature | — | 175 °C |
| Avalanche Energy (EAS) | — | 1445 mJ |
| 封裝 / 外殼 | — | PG-TO263-3-2 (D2PAK) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |