IRF7380TRPBF vs IRF7854TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7380TRPBF disebabkan oleh Infineon dan IRF7854TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7380TRPBF | IRF7854TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $0.48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7380TRPBF | — |
| Configuration | Dual N-Channel MOSFET Array (2 independent FETs in one package) | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 3.6 A | — |
| On-Resistance RDS(on) max | 73 mOhm at VGS = 10 V | — |
| Technology | IR MOSFET™ (Infineon HEXFET-style planar N-ch) | HEXFET (planar N-channel) |
| Total Power Dissipation (PD) | 2 W | — |
| Kemasan | SO-8 (8-SO, SOIC-8) | SO-8 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55 C to +150 C | — |
| Gate Drive Voltage (typical) | 10 V (full RDS(on)); logic-level not guaranteed | — |
| Lead-Free / RoHS | Yes (Pb-free plating, suffix PBF) | Yes (PBF suffix, lead-free) |
| Packaging | Tape & Reel (suffix TR) | — |
| Primary Application | High-frequency DC-DC converters | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 10 A |
| Power Dissipation (PD) at Ta=25°C | — | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | — | 13.4 mΩ |
| Gate-Source Threshold Voltage VGS(th) max | — | 4.9 V |
| Total Gate Charge Qg | — | 27 nC |
| Gambaran Suhu Operasi | — | -55°C to +150°C (TJ) |
| Qualification | — | JEDEC industrial, Normal level |
| Solder Process | — | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | — | 10 V |