IRF7779L2TRPBF vs IRF7769L1TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7779L2TRPBF disebabkan oleh Infineon dan IRF7769L1TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7779L2TRPBF | IRF7769L1TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 67 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=10V | 11 mOhm | 3.5 mOhm |
| RDS(on) typical at VGS=10V | 7.7 mOhm | — |
| Gate-to-Source Voltage (VGS) max | 20 V | — |
| Total Gate Charge (Qg) | 11 nC | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| Power Dissipation (PD) at TA=25C | 3.3 W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
| Kemasan | DirectFET Isometric L8 | DirectFET Isometric L8 |
| Profile Height | 0.7 mm | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | — |
| Polarity | — | N-Channel |
| VDS (Drain-Source Voltage) | — | 100 V |
| VGS (Gate-Source Voltage) | — | ±20 V |
| Continuous Drain Current (TA=25C) | — | 20 A |
| Continuous Drain Current (TC=25C) | — | 124 A |
| Arus Alir Gesa | — | 142 A |
| Power Dissipation (TA=25C) | — | 3.3 W |
| Power Dissipation (TC=25C) | — | 125 W |
| RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge Qg | — | 200 nC |
| Package Profile | — | 0.7 mm |
| Gambaran Suhu Operasi | — | -55C to +150C (TJ) |
| Aras MSL | — | 1 |
| Lead-Free Reflow | — | 260C qualified |
| Boson Bebas | — | Yes |
| RoHS Compliance | — | Compliant |