IRF9530NSTRLPBF vs IRF9540NSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9530NSTRLPBF disebabkan oleh Infineon dan IRF9540NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF9530NSTRLPBF | IRF9540NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC=25C | -14 A | — |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mOhm | — |
| Total Gate Charge (Qg) | 38.7 nC (typ) | 64.7 nC |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) range] | — |
| Power Dissition (PD) at TC=25C | 79 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Thermal Resistance Theta_JC | 1.5 C/W (typ) | — |
| Gambaran Suhu Operasi | -55C to +150C (TJ) | — |
| Kemasan | D2PAK (TO-263-3) | D2PAK (TO-263), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free suffix) | — |
| Technology | HEXFET (Planar DMOS) | HEXFET, Advanced Process |
| Avalanche Rated | [DATA_NEEDED: EAS rating] | Yes |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Product Type | — | Single P-Channel Power MOSFET (HEXFET) |
| Drain-Source Voltage (Vdss) | — | -100 V |
| Continuous Drain Current (Id) | — | -23 A (at Tc) |
| On-Resistance (Rds(on)) | — | 117 mOhm max |
| Power Dissipation (Ta) | — | 3.1 W |
| Power Dissipation (Tc) | — | 110 W |
| Operating Mode | — | Enhancement-mode |
| Lead Finish | — | Pb-free, RoHS-compliant |
| Shipping Media | — | Tape and Reel (TR suffix) |