IRF9530NSTRLPBF vs IRF9540NSTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF9530NSTRLPBF sa pamamagitan ng Infineon at IRF9540NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF9540NSTRLPBF IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon

IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon

IRF9540NSTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF9530NSTRLPBF IRF9540NSTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TC=25C -14 A —
On-Resistance RDS(on) max @ VGS=-10V 200 mOhm —
Total Gate Charge (Qg) 38.7 nC (typ) 64.7 nC
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) range] —
Power Dissition (PD) at TC=25C 79 W —
Power Dissipation (PD) at TA=25C 3.8 W —
Thermal Resistance Theta_JC 1.5 C/W (typ) —
Hanay ng Temperature na Operasyon -55C to +150C (TJ) —
Packhaging D2PAK (TO-263-3) D2PAK (TO-263), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Lead-Free / RoHS Yes (Pb-free suffix) —
Technology HEXFET (Planar DMOS) HEXFET, Advanced Process
Avalanche Rated [DATA_NEEDED: EAS rating] Yes
Manufacturer — Infineon (formerly International Rectifier)
Product Type — Single P-Channel Power MOSFET (HEXFET)
Drain-Source Voltage (Vdss) — -100 V
Continuous Drain Current (Id) — -23 A (at Tc)
On-Resistance (Rds(on)) — 117 mOhm max
Power Dissipation (Ta) — 3.1 W
Power Dissipation (Tc) — 110 W
Operating Mode — Enhancement-mode
Lead Finish — Pb-free, RoHS-compliant
Shipping Media — Tape and Reel (TR suffix)

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