IRF9540NPBF vs IRFZ48NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9540NPBF disebabkan oleh Infineon dan IRFZ48NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF9540NPBF | IRFZ48NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF9540NPBF | — |
| Jenis Transistor | P-Channel MOSFET (HEXFET Power MOSFET) | — |
| Drain-to-Source Voltage (VDS) | -100 V | 55 V |
| Continuous Drain Current (ID) at Tc | -23 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | +/-20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 117 mOhm | — |
| Total Gate Charge (Qg) | 64.7 nC | 54 nC |
| Power Dissipation (PD) at Tc=25C | 140 W | — |
| Gambaran Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan / Case | TO-220AB (through-hole, 3 pins + tab) | — |
| Jenis Pemasangan | Through Hole | Through Hole |
| Process Technology | Planar HEXFET cell structure | — |
| Qualification | JEDEC standard | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes (Pb-free matte tin plating) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC | — | 64 A |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | — | 14 mΩ (maximum) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) at TC | — | 130 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Kemasan | — | TO-220AB (through-hole) |
| Technology | — | HEXFET (advanced planar) |
| Lead-Free (PBF suffix) | — | Yes |
| Qualification Standard | — | Industrial market |