IRF9540NPBF vs IRFZ48NPBF Comparison

Detailed side-by-side comparison of IRF9540NPBF by Infineon and IRFZ48NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFZ48NPBF IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220

IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220

IRFZ48NPBF βœ“ Active

Specification Comparison

Parameter IRF9540NPBF IRFZ48NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.86 $0.65
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRF9540NPBF β€”
Transistor Type P-Channel MOSFET (HEXFET Power MOSFET) β€”
Drain-to-Source Voltage (VDS) -100 V 55 V
Continuous Drain Current (ID) at Tc -23 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max +/-20 V β€”
Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V 117 mOhm β€”
Total Gate Charge (Qg) 64.7 nC 54 nC
Power Dissipation (PD) at Tc=25C 140 W β€”
Operating Junction Temperature Range -55 C to +175 C β€”
Package / Case TO-220AB (through-hole, 3 pins + tab) β€”
Mounting Type Through Hole Through Hole
Process Technology Planar HEXFET cell structure β€”
Qualification JEDEC standard β€”
RoHS Status Compliant Compliant
Lead-Free Yes (Pb-free matte tin plating) β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at TC β€” 64 A
Gate-to-Source Voltage (VGS) β€” Β±20 V
On-Resistance (RDS(on)) at VGS=10V β€” 14 mΞ© (maximum)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Power Dissipation (PD) at TC β€” 130 W
Operating Junction Temperature β€” -55C to +175C
Package β€” TO-220AB (through-hole)
Technology β€” HEXFET (advanced planar)
Lead-Free (PBF suffix) β€” Yes
Qualification Standard β€” Industrial market

Datasheets & Resources

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