IRF9540NSTRLPBF vs IRF9530NSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9540NSTRLPBF disebabkan oleh Infineon dan IRF9530NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF9540NSTRLPBF | IRF9530NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Product Type | Single P-Channel Power MOSFET (HEXFET) | — |
| Drain-Source Voltage (Vdss) | -100 V | — |
| Continuous Drain Current (Id) | -23 A (at Tc) | — |
| On-Resistance (Rds(on)) | 117 mOhm max | — |
| Total Gate Charge (Qg) | 64.7 nC | 38.7 nC (typ) |
| Power Dissipation (Ta) | 3.1 W | — |
| Power Dissipation (Tc) | 110 W | — |
| Kemasan | D2PAK (TO-263), surface mount | D2PAK (TO-263-3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET, Advanced Process | HEXFET (Planar DMOS) |
| Polarity | P-Channel | P-Channel |
| Operating Mode | Enhancement-mode | — |
| Avalanche Rated | Yes | [DATA_NEEDED: EAS rating] |
| Lead Finish | Pb-free, RoHS-compliant | — |
| Shipping Media | Tape and Reel (TR suffix) | — |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TC=25C | — | -14 A |
| On-Resistance RDS(on) max @ VGS=-10V | — | 200 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) range] |
| Power Dissition (PD) at TC=25C | — | 79 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Thermal Resistance Theta_JC | — | 1.5 C/W (typ) |
| Gambaran Suhu Operasi | — | -55C to +150C (TJ) |
| Lead-Free / RoHS | — | Yes (Pb-free suffix) |