IRF9540NSTRLPBF vs IRF9530NSTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF9540NSTRLPBF sa pamamagitan ng Infineon at IRF9530NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF9540NSTRLPBF IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon

IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon

IRF9540NSTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF9540NSTRLPBF IRF9530NSTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon (formerly International Rectifier) —
Product Type Single P-Channel Power MOSFET (HEXFET) —
Drain-Source Voltage (Vdss) -100 V —
Continuous Drain Current (Id) -23 A (at Tc) —
On-Resistance (Rds(on)) 117 mOhm max —
Total Gate Charge (Qg) 64.7 nC 38.7 nC (typ)
Power Dissipation (Ta) 3.1 W —
Power Dissipation (Tc) 110 W —
Packhaging D2PAK (TO-263), surface mount D2PAK (TO-263-3)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET, Advanced Process HEXFET (Planar DMOS)
Polarity P-Channel P-Channel
Operating Mode Enhancement-mode —
Avalanche Rated Yes [DATA_NEEDED: EAS rating]
Lead Finish Pb-free, RoHS-compliant —
Shipping Media Tape and Reel (TR suffix) —
Drain-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TC=25C — -14 A
On-Resistance RDS(on) max @ VGS=-10V — 200 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) range]
Power Dissition (PD) at TC=25C — 79 W
Power Dissipation (PD) at TA=25C — 3.8 W
Thermal Resistance Theta_JC — 1.5 C/W (typ)
Hanay ng Temperature na Operasyon — -55C to +150C (TJ)
Lead-Free / RoHS — Yes (Pb-free suffix)

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