IRF9540NSTRLPBF vs IRF9540NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9540NSTRLPBF disebabkan oleh Infineon dan IRF9540NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF9540NSTRLPBF IRF9540NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Product Type Single P-Channel Power MOSFET (HEXFET) —
Drain-Source Voltage (Vdss) -100 V —
Continuous Drain Current (Id) -23 A (at Tc) —
On-Resistance (Rds(on)) 117 mOhm max —
Total Gate Charge (Qg) 64.7 nC 64.7 nC
Power Dissipation (Ta) 3.1 W —
Power Dissipation (Tc) 110 W —
Kemasan D2PAK (TO-263), surface mount —
Jenis Pemasangan Surface Mount Through Hole
Technology HEXFET, Advanced Process —
Polarity P-Channel —
Operating Mode Enhancement-mode —
Avalanche Rated Yes —
Lead Finish Pb-free, RoHS-compliant —
Shipping Media Tape and Reel (TR suffix) —
Part Number — IRF9540NPBF
Jenis Transistor — P-Channel MOSFET (HEXFET Power MOSFET)
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at Tc — -23 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — +/-20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V — 117 mOhm
Power Dissipation (PD) at Tc=25C — 140 W
Gambaran Suhu Hubungan Operasi — -55 C to +175 C
Kemasan / Case — TO-220AB (through-hole, 3 pins + tab)
Process Technology — Planar HEXFET cell structure
Qualification — JEDEC standard
Status RoHS — Compliant
Lead-Free — Yes (Pb-free matte tin plating)

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