IRFR3411TRPBF vs IRFZ34NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3411TRPBF disebabkan oleh Infineon dan IRFZ34NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR3411TRPBF IRFZ34NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
FET Type MOSFET (Metal Oxide) N-Channel, Enhancement Mode
V(BR)DSS (Drain-Source Breakdown Voltage) 100 V —
RDS(on) max @ VGS=10V 44 mOhm —
Continuous Drain Current (Id) @ Tc 32 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Pd) @ Tc 130 W —
Gate Charge (Qg) 48 nC —
Operating Mode Enhancement —
Maximum Junction Temperature 175 C 175 C
Gambaran Suhu Operasi -55 C to +175 C -55 C to +175 C
Kemasan TO-252AA (DPAK) TO-220AB (3-pin + tab, through-hole)
Jenis Pemasangan Surface Mount Through Hole
Bilangan Pin 3 —
Technology HEXFET Power MOSFET (IR) HEXFET (Planar DMOS, 5th generation)
Avalanche Rated Yes (fully avalanche rated) —
dv/dt Rating Dynamic dv/dt rated —
Lead-Free / RoHS Yes (Lead-free, PBF suffix) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Status — Active
Drain-Source Voltage (V_DSS) — 55 V
Continuous Drain Current (I_D) at Tc=25C — 29 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (P_D) at Tc=25C — 68 W
On-Resistance R_DS(on) max at V_GS=10V — 40 mOhm
Gate Charge (Q_g) typ — 22.7 nC
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: gate threshold voltage]
Input Capacitance (C_iss) typ — [DATA_NEEDED: input capacitance]
Lead-Free Status — Yes (Pb-free, RoHS compliant)
Qualification — JEDEC standard
Status RoHS — Compliant
Configuration — Single N-Channel, 3-pin (3+tab)

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