IRFR3411TRPBF vs IRFZ34NPBF 比較
詳細並排比較 IRFR3411TRPBF 由 Infineon 與 IRFZ34NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR3411TRPBF | IRFZ34NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| FET Type | MOSFET (Metal Oxide) | N-Channel, Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 100 V | — |
| RDS(on) max @ VGS=10V | 44 mOhm | — |
| Continuous Drain Current (Id) @ Tc | 32 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Pd) @ Tc | 130 W | — |
| Gate Charge (Qg) | 48 nC | — |
| Operating Mode | Enhancement | — |
| Maximum Junction Temperature | 175 C | 175 C |
| 工作溫度範圍 | -55 C to +175 C | -55 C to +175 C |
| 封裝 | TO-252AA (DPAK) | TO-220AB (3-pin + tab, through-hole) |
| 安裝類型 | Surface Mount | Through Hole |
| 腳位數 | 3 | — |
| Technology | HEXFET Power MOSFET (IR) | HEXFET (Planar DMOS, 5th generation) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| dv/dt Rating | Dynamic dv/dt rated | — |
| Lead-Free / RoHS | Yes (Lead-free, PBF suffix) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Status | — | Active |
| Drain-Source Voltage (V_DSS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 29 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc=25C | — | 68 W |
| On-Resistance R_DS(on) max at V_GS=10V | — | 40 mOhm |
| Gate Charge (Q_g) typ | — | 22.7 nC |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Input Capacitance (C_iss) typ | — | [DATA_NEEDED: input capacitance] |
| Lead-Free Status | — | Yes (Pb-free, RoHS compliant) |
| Qualification | — | JEDEC standard |
| RoHS 狀態 | — | Compliant |
| Configuration | — | Single N-Channel, 3-pin (3+tab) |