IRFR3411TRPBF vs IRLR3110ZTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3411TRPBF disebabkan oleh Infineon dan IRLR3110ZTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR3411TRPBF | IRLR3110ZTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| FET Type | MOSFET (Metal Oxide) | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 100 V | — |
| RDS(on) max @ VGS=10V | 44 mOhm | 14 mOhm |
| Continuous Drain Current (Id) @ Tc | 32 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Pd) @ Tc | 130 W | — |
| Gate Charge (Qg) | 48 nC | — |
| Operating Mode | Enhancement | — |
| Maximum Junction Temperature | 175 C | — |
| Gambaran Suhu Operasi | -55 C to +175 C | — |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 3 | — |
| Technology | HEXFET Power MOSFET (IR) | HEXFET / Trench MOSFET |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| dv/dt Rating | Dynamic dv/dt rated | — |
| Lead-Free / RoHS | Yes (Lead-free, PBF suffix) | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | 15 nC |
| Power Dissipation (PD) at TC=25C | — | 140 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Aras MSL | — | 1 (Unlimited) |
| Status RoHS | — | Compliant |
| Lead-Free Plating | — | Yes (PBF suffix) |
| Boson Bebas | — | Yes |