IRFR3411TRPBF vs IRLR3110ZTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR3411TRPBF sa pamamagitan ng Infineon at IRLR3110ZTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRLR3110ZTRPBF IRLR3110ZTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR3110ZTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR3110ZTRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR3411TRPBF IRLR3110ZTRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel —
FET Type MOSFET (Metal Oxide) N-Channel
V(BR)DSS (Drain-Source Breakdown Voltage) 100 V —
RDS(on) max @ VGS=10V 44 mOhm 14 mOhm
Continuous Drain Current (Id) @ Tc 32 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Pd) @ Tc 130 W —
Gate Charge (Qg) 48 nC —
Operating Mode Enhancement —
Maximum Junction Temperature 175 C —
Hanay ng Temperature na Operasyon -55 C to +175 C —
Packhaging TO-252AA (DPAK) TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pins 3 —
Technology HEXFET Power MOSFET (IR) HEXFET / Trench MOSFET
Avalanche Rated Yes (fully avalanche rated) —
dv/dt Rating Dynamic dv/dt rated —
Lead-Free / RoHS Yes (Lead-free, PBF suffix) —
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 42 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — 15 nC
Power Dissipation (PD) at TC=25C — 140 W
Temperature ng Junction na Operasyon — -55C to +175C
Level ng MSL — 1 (Unlimited)
Tindminan RoHS — Compliant
Lead-Free Plating — Yes (PBF suffix)
Wala sa Halogen — Yes

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