IRFR3411TRPBF vs IRLR3110ZTRPBF 比較
詳細並排比較 IRFR3411TRPBF 由 Infineon 與 IRLR3110ZTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR3411TRPBF | IRLR3110ZTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| FET Type | MOSFET (Metal Oxide) | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 100 V | — |
| RDS(on) max @ VGS=10V | 44 mOhm | 14 mOhm |
| Continuous Drain Current (Id) @ Tc | 32 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Pd) @ Tc | 130 W | — |
| Gate Charge (Qg) | 48 nC | — |
| Operating Mode | Enhancement | — |
| Maximum Junction Temperature | 175 C | — |
| 工作溫度範圍 | -55 C to +175 C | — |
| 封裝 | TO-252AA (DPAK) | TO-252AA (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 | — |
| Technology | HEXFET Power MOSFET (IR) | HEXFET / Trench MOSFET |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| dv/dt Rating | Dynamic dv/dt rated | — |
| Lead-Free / RoHS | Yes (Lead-free, PBF suffix) | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | 15 nC |
| Power Dissipation (PD) at TC=25C | — | 140 W |
| 工作接面溫度 | — | -55C to +175C |
| MSL 等級 | — | 1 (Unlimited) |
| RoHS 狀態 | — | Compliant |
| Lead-Free Plating | — | Yes (PBF suffix) |
| 無鹵素 | — | Yes |