IRFR5305TRPBF vs IRF5305STRRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR5305TRPBF disebabkan oleh Infineon dan IRF5305STRRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR5305TRPBF | IRF5305STRRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) Max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | 31 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 110 W | — |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | — |
| Gambaran Suhu Operasi | -55 C to +175 C | — |
| Kemasan | TO-252AA (DPAK) | D2PAK (TO-263) Surface Mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET (Advanced Process) |
| Aras MSL | 1 | — |
| Status RoHS | Compliant (Pb-free PBF suffix) | — |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Jenis Transistor | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC | — | -31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max @ VGS=-10V | — | 60 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Power Dissipation (TC) | — | 110 W |
| Power Dissipation (TA) | — | 3.8 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (Pb-free suffix) |
| Packaging | — | Tape & Reel (TR) |