IRFR9120NTRLPBF vs IRFR120NTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR9120NTRLPBF disebabkan oleh Infineon dan IRFR120NTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR9120NTRLPBF | IRFR120NTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | 100 V |
| Continuous Drain Current (ID) | -6.6 A (Tc) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | -2 V to -4 V | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance (RDS(on)) | 480 mOhm max @ VGS = -10 V | — |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Power Dissipation (PD) | 40 W (Tc) | — |
| Gambaran Suhu Operasi | -55C to +150C (Tj) | — |
| Kemasan | TO-252AA (DPAK) | PG-TO252-3 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Technology | IR MOSFET (planar) | IR MOSFET (HEXFET) |
| Aras MSL | 1 | — |
| Status RoHS | Compliant (Pb-free) | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 9.4 A |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) max at VGS=10V | — | 210 mΩ |
| Total Gate Charge (Qg) | — | 16.7 nC |
| Power Dissipation (PD) at TC=25C | — | 48 W |
| Gambaran Suhu Hubungan Operasi | — | -55C to +175C |
| Avalanche Energy Rated | — | Yes (fully avalanche rated) |
| Lead-Free Finish | — | Yes (Pb-free) |