IRFR9120NTRLPBF vs IRFR120NTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR9120NTRLPBF sa pamamagitan ng Infineon at IRFR120NTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR9120NTRLPBF | IRFR120NTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | 100 V |
| Continuous Drain Current (ID) | -6.6 A (Tc) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | -2 V to -4 V | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance (RDS(on)) | 480 mOhm max @ VGS = -10 V | — |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Power Dissipation (PD) | 40 W (Tc) | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (Tj) | — |
| Packhaging | TO-252AA (DPAK) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| Technology | IR MOSFET (planar) | IR MOSFET (HEXFET) |
| Level ng MSL | 1 | — |
| Tindminan RoHS | Compliant (Pb-free) | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 9.4 A |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) max at VGS=10V | — | 210 mΩ |
| Total Gate Charge (Qg) | — | 16.7 nC |
| Power Dissipation (PD) at TC=25C | — | 48 W |
| Hanay ng Temperature ng Junction na Operasyon | — | -55C to +175C |
| Avalanche Energy Rated | — | Yes (fully avalanche rated) |
| Lead-Free Finish | — | Yes (Pb-free) |