IRFR9120NTRLPBF vs IRFR9120NTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR9120NTRLPBF disebabkan oleh Infineon dan IRFR9120NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR9120NTRLPBF | IRFR9120NTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | -100 V |
| Continuous Drain Current (ID) | -6.6 A (Tc) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | -2 V to -4 V | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance (RDS(on)) | 480 mOhm max @ VGS = -10 V | — |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Power Dissipation (PD) | 40 W (Tc) | — |
| Gambaran Suhu Operasi | -55C to +150C (Tj) | — |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Technology | IR MOSFET (planar) | HEXFET fifth-generation IR MOSFET |
| Aras MSL | 1 | 1 (unlimited floor life) |
| Status RoHS | Compliant (Pb-free) | Compliant |
| Lead-Free | Yes | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID) at TC=25C | — | -6.6 A |
| On-Resistance (RDS(on)) max at VGS=-10V | — | 480 milliohm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) | — | 18 nC (typical) |
| Continuous Power Dissipation (PD) at TC=25C | — | 40 W |
| Gambaran Suhu Hubungan Operasi | — | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Lead Finish / Plating | — | Pb-free (PBF suffix), Matte Tin |
| Moisture Sensitivity | — | MSL1 per JEDEC J-STD-020 |