IRFR9120NTRLPBF vs IRFR9120NTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR9120NTRLPBF sa pamamagitan ng Infineon at IRFR9120NTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR9120NTRLPBF IRFR9120NTRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V -100 V
Continuous Drain Current (ID) -6.6 A (Tc) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) -2 V to -4 V [DATA_NEEDED: gate threshold voltage]
On-Resistance (RDS(on)) 480 mOhm max @ VGS = -10 V —
Gate Charge (Qg) 18 nC (typ) —
Power Dissipation (PD) 40 W (Tc) —
Hanay ng Temperature na Operasyon -55C to +150C (Tj) —
Packhaging TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Gate, Drain, Source) —
Technology IR MOSFET (planar) HEXFET fifth-generation IR MOSFET
Level ng MSL 1 1 (unlimited floor life)
Tindminan RoHS Compliant (Pb-free) Compliant
Lead-Free Yes —
Polarity — P-Channel
Continuous Drain Current (ID) at TC=25C — -6.6 A
On-Resistance (RDS(on)) max at VGS=-10V — 480 milliohm
Gate-Source Voltage (VGS) max — +/-20 V
Total Gate Charge (Qg) — 18 nC (typical)
Continuous Power Dissipation (PD) at TC=25C — 40 W
Hanay ng Temperature ng Junction na Operasyon — -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
Lead Finish / Plating — Pb-free (PBF suffix), Matte Tin
Moisture Sensitivity — MSL1 per JEDEC J-STD-020

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