IRFZ48NSTRLPBF vs IRF640NSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ48NSTRLPBF disebabkan oleh Infineon dan IRF640NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFZ48NSTRLPBF IRF640NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Power MOSFET N-Channel
Drain-to-Source Voltage (VDS) 55 V 200 V
Continuous Drain Current (ID) @ Tc=25C 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V [DATA_NEEDED: VGS(th) typical/min]
Total Gate Charge (Qg) 54 nC 44.7 nC
Gate-to-Source Voltage (VGS) max ±20 V —
Power Dissipation (Pd) @ Tc=25C 130 W —
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan D2PAK (TO-263) Surface Mount D2PAK (TO-263AB), surface mount, 3-pin (2+tab)
Jenis Pemasangan Surface Mount Surface Mount (Tape and Reel)
Packaging Tape & Reel (13-inch reel, TRL) —
Lead Finish Lead-free (PBF) matte tin —
Status RoHS Compliant Compliant
Technology Family HEXFET advanced process technology —
Technology — HEXFET (5th generation, trench MOSFET)
Continuous Drain Current (ID, Tc=25C) — 18 A
Maximum Power Dissipation (PD, Tc=25C) — 150 W
On-Resistance (RDS(on)) at VGS=10V — 0.15 ohm
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Gambaran Suhu Hubungan Operasi — -55C to +175C
Lead-Free (PbF) — Yes

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