IRFZ48NSTRLPBF vs IRFR2405TRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ48NSTRLPBF disebabkan oleh Infineon dan IRFR2405TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFZ48NSTRLPBF IRFR2405TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Power MOSFET —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) @ Tc=25C 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 200 A (typical, per datasheet family)
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 54 nC —
Gate-to-Source Voltage (VGS) max ±20 V —
Power Dissipation (Pd) @ Tc=25C 130 W —
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan D2PAK (TO-263) Surface Mount TO-252AA (DPAK), 3-pin (2 + Tab)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) Tape & Reel (TR)
Lead Finish Lead-free (PBF) matte tin —
Status RoHS Compliant —
Technology Family HEXFET advanced process technology —
Jenis Transistor — N-Channel MOSFET
Technology — HEXFET (IR MOSFET, 7th generation)
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc — 56 A
On-Resistance RDS(on) max @ VGS=10V — 16 mOhm
Gate Charge (Qg) typical — 70 nC
Power Dissipation (PD) at Tc — 110 W
Gate-Source Voltage (VGS) max — ±20 V
Gambaran Suhu Operasi — -55 C to +175 C (junction)
Avalanche Energy Rated — Yes (HEXFET ruggedized design)
Lead-Free / RoHS — Yes, PBF suffix indicates lead-free and RoHS compliant

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