IRFZ48NSTRLPBF vs IRFR2405TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFZ48NSTRLPBF sa pamamagitan ng Infineon at IRFR2405TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFZ48NSTRLPBF IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon

IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon

IRFZ48NSTRLPBF ✓ Nakahanda
Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFZ48NSTRLPBF IRFR2405TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel Power MOSFET —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) @ Tc=25C 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 200 A (typical, per datasheet family)
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 54 nC —
Gate-to-Source Voltage (VGS) max ±20 V —
Power Dissipation (Pd) @ Tc=25C 130 W —
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging D2PAK (TO-263) Surface Mount TO-252AA (DPAK), 3-pin (2 + Tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) Tape & Reel (TR)
Lead Finish Lead-free (PBF) matte tin —
Tindminan RoHS Compliant —
Technology Family HEXFET advanced process technology —
Uri ng Transistor — N-Channel MOSFET
Technology — HEXFET (IR MOSFET, 7th generation)
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc — 56 A
On-Resistance RDS(on) max @ VGS=10V — 16 mOhm
Gate Charge (Qg) typical — 70 nC
Power Dissipation (PD) at Tc — 110 W
Gate-Source Voltage (VGS) max — ±20 V
Hanay ng Temperature na Operasyon — -55 C to +175 C (junction)
Avalanche Energy Rated — Yes (HEXFET ruggedized design)
Lead-Free / RoHS — Yes, PBF suffix indicates lead-free and RoHS compliant

Mga Datasheets at Resources

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