IRL3705NPBF vs IRFZ48NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRL3705NPBF disebabkan oleh Infineon dan IRFZ48NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRL3705NPBF | IRFZ48NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc | 89 A | — |
| Arus Alir Gesa | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at Tc | 170 W | — |
| On-Resistance R_DS(on) | 10 mOhm (typical, V_GS = 5 V) | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | 65.3 nC | — |
| Maximum Junction Temperature | 175 C | — |
| Technology | HEXFET (planar cell, fifth generation) | HEXFET (advanced planar) |
| Kemasan | TO-220AB (3-pin through-hole) | TO-220AB (through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Gate Drive Level | Logic-level | — |
| Avalanche Rated | Yes (ruggedized single-pulse avalanche) | — |
| Lead-Free (PBF suffix) | Yes | Yes |
| Status RoHS | Compliant (per PBF suffix) | Compliant |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 64 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | — | 14 mΩ (maximum) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | 54 nC |
| Power Dissipation (PD) at TC | — | 130 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Qualification Standard | — | Industrial market |