IRLB4132PBF vs IRF3205ZSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLB4132PBF disebabkan oleh Infineon dan IRF3205ZSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLB4132PBF IRF3205ZSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Jenis Transistor N-Channel MOSFET (HEXFET) —
Drain-Source Voltage (VDS) 30 V 55 V
Continuous Drain Current (ID, Tc=25C) 78 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
Maximum Power Dissipation (PD, Tc=25C) 140 W —
On-Resistance (RDS(on), VGS=10V) 3.5 mOhm (typical) —
On-Resistance (RDS(on), VGS=4.5V) [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th), typical) 1.0 V to 2.5 V —
Gate Charge (Qg, typical) [DATA_NEEDED: total gate charge] —
Maximum Junction Temperature 175 C —
Gambaran Suhu Operasi -55 C to +175 C —
Kemasan / Case TO-220AB (through-hole, 3 leads) —
Jenis Pemasangan Through Hole Surface Mount
Lead-Free / RoHS Yes (Pb-free PBF suffix) —
AEC-Q101 Automotive Qualification Not qualified (industrial/commercial) —
FET Type — N-Channel
Technology — HEXFET (IR MOSFET)
Continuous Drain Current (ID) at Tc=25C — 110 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
On-Resistance RDS(on) max @ VGS=10V — 6.5 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — 76 nC
Power Dissipation (PD) at Tc=25C — 170 W
Suhu Hubungan Operasi — -55C to +175C
Kemasan — D2PAK (TO-263)
Packaging — Tape & Reel (left reel)
Status RoHS — Compliant
Aras MSL — 1
Body Diode — Avalanche-rated intrinsic

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