IRLB4132PBF vs IRF3205ZSTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLB4132PBF sa pamamagitan ng Infineon at IRF3205ZSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRLB4132PBF IRLB4132PBF - 30V 78A N-Channel HEXFET MOSFET TO-220

IRLB4132PBF - 30V 78A N-Channel HEXFET MOSFET TO-220

IRLB4132PBF ✓ Nakahanda
Infineon
IRF3205ZSTRLPBF IRF3205ZSTRLPBF - 55V 110A N-Channel HEXFET MOSFET | Infineon

IRF3205ZSTRLPBF - 55V 110A N-Channel HEXFET MOSFET | Infineon

IRF3205ZSTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRLB4132PBF IRF3205ZSTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Uri ng Transistor N-Channel MOSFET (HEXFET) —
Drain-Source Voltage (VDS) 30 V 55 V
Continuous Drain Current (ID, Tc=25C) 78 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
Maximum Power Dissipation (PD, Tc=25C) 140 W —
On-Resistance (RDS(on), VGS=10V) 3.5 mOhm (typical) —
On-Resistance (RDS(on), VGS=4.5V) [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th), typical) 1.0 V to 2.5 V —
Gate Charge (Qg, typical) [DATA_NEEDED: total gate charge] —
Maximum Junction Temperature 175 C —
Hanay ng Temperature na Operasyon -55 C to +175 C —
Packhaging / Kaso TO-220AB (through-hole, 3 leads) —
Uri ng Pagpapasok Through Hole Surface Mount
Lead-Free / RoHS Yes (Pb-free PBF suffix) —
AEC-Q101 Automotive Qualification Not qualified (industrial/commercial) —
FET Type — N-Channel
Technology — HEXFET (IR MOSFET)
Continuous Drain Current (ID) at Tc=25C — 110 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
On-Resistance RDS(on) max @ VGS=10V — 6.5 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — 76 nC
Power Dissipation (PD) at Tc=25C — 170 W
Temperature ng Junction na Operasyon — -55C to +175C
Packhaging — D2PAK (TO-263)
Packaging — Tape & Reel (left reel)
Tindminan RoHS — Compliant
Level ng MSL — 1
Body Diode — Avalanche-rated intrinsic

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