IRLL024ZTRPBF vs IRF8734TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLL024ZTRPBF disebabkan oleh Infineon dan IRF8734TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLL024ZTRPBF IRF8734TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Technology HEXFET Power MOSFET (trench-gate) StrongIRFET™ (HEXFET)
FET Type N-Channel enhancement-mode —
Drain-Source Voltage (VDS) max 55 V —
Gate-Source Voltage (VGS) max ±16 V —
Continuous Drain Current (ID) at TC=25°C 5 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V 60 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) —
Total Gate Charge (Qg) typical 7 nC —
Power Dissipation (PD) at TA=25°C 1 W —
Operating Junction Temperature (TJ) -55 °C to +150 °C —
Kemasan SOT-223 (TO-261-4) —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited floor life) [DATA_NEEDED: MSL rating per J-STD-020]
Status RoHS Compliant Compliant (PBF suffix)
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 21 A
On-Resistance RDS(on) max at VGS=10V — 3.5 mOhm
Gate Charge (Qg) typ — 20 nC
Power Dissipation (PD) at Ta — 2.5 W
Kemasan / Case — 8-SOIC (SO-8)
Gambaran Suhu Operasi — -55C to +150C (junction)
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
Avalanche Energy Rating — Fully characterized avalanche voltage
Lead-Free / Halogen-Free — Lead-free (PBF suffix)
Packaging — Tape & Reel (TR)

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