IRLL024ZTRPBF vs IRF8734TRPBF 比較
詳細並排比較 IRLL024ZTRPBF 由 Infineon 與 IRF8734TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLL024ZTRPBF | IRF8734TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Technology | HEXFET Power MOSFET (trench-gate) | StrongIRFET™ (HEXFET) |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) max | 55 V | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 60 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) | — |
| Total Gate Charge (Qg) typical | 7 nC | — |
| Power Dissipation (PD) at TA=25°C | 1 W | — |
| Operating Junction Temperature (TJ) | -55 °C to +150 °C | — |
| 封裝 | SOT-223 (TO-261-4) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (unlimited floor life) | [DATA_NEEDED: MSL rating per J-STD-020] |
| RoHS 狀態 | Compliant | Compliant (PBF suffix) |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.5 mOhm |
| Gate Charge (Qg) typ | — | 20 nC |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| 封裝 / 外殼 | — | 8-SOIC (SO-8) |
| 工作溫度範圍 | — | -55C to +150C (junction) |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Avalanche Energy Rating | — | Fully characterized avalanche voltage |
| Lead-Free / Halogen-Free | — | Lead-free (PBF suffix) |
| Packaging | — | Tape & Reel (TR) |