IS43TR16256A-125KBL vs K4B4G1646D-BPH90 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IS43TR16256A-125KBL disebabkan oleh ISSI, Integrated Silicon Solution Inc dan K4B4G1646D-BPH90 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI
IS43TR16256A-125KBL ✓ AktifSamsung Electronics
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 ✓ AktifPengandingan Spesifikasi
| Parametr | IS43TR16256A-125KBL | K4B4G1646D-BPH90 |
|---|---|---|
| Merek | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $19.09 | — |
| Jenis Ingatan | DDR3 SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4Gbit (256M x 16) | — |
| Kadar Data | 1600MT/s | 2133 Mb/s per pin |
| Clock Frequency | 800 MHz | — |
| Access Time | 20 ns | — |
| Supply Voltage (VDD) | 1.5V ± 0.075V | — |
| Supply Voltage (VDDQ) | 1.5V ± 0.075V | — |
| Latensi CAS | 11 | Programmable up to 14 |
| Burst Length | 8 (with burst chop 4) | 8, 4 (with burst chop) |
| Kemasan | 96-TWBGA (9x13mm) | 96FBGA |
| Jenis Pemasangan | Surface Mount | — |
| Suhu Operasi | 0°C to +95°C (Tc) | 0°C to +85°C |
| RoHS | Compliant | — |
| Bilangan Pin | 96 | — |
| Organisasi | 256M x 16 | 32M x 16 |
| Density | — | 4Gb |
| Number of Banks | — | 8 |
| Tegangan Pemberi Arus | — | 1.35V (DDR3L) |
| On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| RoHS Compliant | — | Yes |