ISC015N04NM5ATMA1 vs ISC0703NLSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N04NM5ATMA1 disebabkan oleh Infineon dan ISC0703NLSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC015N04NM5ATMA1 ISC0703NLSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 40V Normal Level —
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) Trench MOSFET (OptiMOS family)
Drain-Source Voltage (VDS) 40 V 60 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 3.4 V (typ) [DATA_NEEDED: VGS(th) typical and min/max]
R_DS(on) max 1.5 mOhm @ VGS=10 V, ID=50 A —
Continuous Drain Current (ID) at Ta=25C 33 A 13 A
Continuous Drain Current (ID) at Tc=25C 206 A 57 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 115 W —
Gambaran Suhu Operasi -55 C to +175 C (junction, per OptiMOS 5) -55C to +150C (junction)
Kemasan / Case PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Status RoHS Compliant Compliant
Aras MSL 1 (per Infineon SuperSO8 family) [DATA_NEEDED: MSL level]
Drive Level Normal Level (VGS(th) ~3.4 V) —
Polarity / Channel Type — N-Channel
Power Dissipation (PD) at Ta=25C — 3 W
Power Dissipation (PD) at Tc=25C — 44 W
Kemasan — PG-TDSON-8 (5x6 mm)
Standard Package Quantity — 5,000 (reel)
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Avalanche Energy (EAS) — [DATA_NEEDED: EAS rating]

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