ISC015N04NM5ATMA1 vs ISC0703NLSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC015N04NM5ATMA1 sa pamamagitan ng Infineon at ISC0703NLSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
ISC015N04NM5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC015N04NM5ATMA1 | ISC0703NLSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 40V Normal Level | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | Trench MOSFET (OptiMOS family) |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | [DATA_NEEDED: VGS(th) typical and min/max] |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | — |
| Continuous Drain Current (ID) at Ta=25C | 33 A | 13 A |
| Continuous Drain Current (ID) at Tc=25C | 206 A | 57 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 115 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction, per OptiMOS 5) | -55C to +150C (junction) |
| Packhaging / Kaso | PG-TDSON-8 FL (SuperSO8 5x6 mm) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per Infineon SuperSO8 family) | [DATA_NEEDED: MSL level] |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | — |
| Polarity / Channel Type | — | N-Channel |
| Power Dissipation (PD) at Ta=25C | — | 3 W |
| Power Dissipation (PD) at Tc=25C | — | 44 W |
| Packhaging | — | PG-TDSON-8 (5x6 mm) |
| Standard Package Quantity | — | 5,000 (reel) |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS rating] |