ISC028N03LF2SATMA1 vs ISC008N06LM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC028N03LF2SATMA1 disebabkan oleh Infineon dan ISC008N06LM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC028N03LF2SATMA1 ISC008N06LM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 30V OptiMOS 6
Polarity / Channel Type N-Channel N-Channel Enhancement Mode
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 128 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm —
Gate Threshold Voltage VGS(th) typ 2.35 V —
Power Dissipation at TA 3 W —
Power Dissipation at TC 83 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TDSON-8-62 (5x6 mm) with exposed pad —
Jenis Pemasangan Surface Mount —
RoHS / Lead-Free Yes (RoHS compliant) —
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta — 44 A
Pulsed Drain Current (ID, pulse) at Tc — 378 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 221 W
Gate-Source Voltage (VGS) max — +/-20 V
RDS(on) max @ VGS=10 V — [DATA_NEEDED: RDS(on) at 10 V]
Gate Threshold Voltage (VGS(th)) — Logic Level (1.0 V to 2.4 V typical)
Gambaran Suhu Operasi — -55 C to +175 C (Tj)
Package Type — PG-TDSON-8 (Surface Mount)
Gaya Pemasangan — Surface Mount, Tape & Reel
RoHS / Lead-Free Status — RoHS Compliant, Lead-Free
Boson Bebas — Yes

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