ISC045N03L5SATMA1 vs ISC030N12NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC045N03L5SATMA1 disebabkan oleh Infineon dan ISC030N12NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC045N03L5SATMA1 ISC030N12NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number ISC045N03L5SATMA1 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 5 / Trench OptiMOS 6 (trench)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25°C 18 A —
Continuous Drain Current (ID) at TC=25°C 63 A —
On-Resistance RDS(on) max @ VGS=10V 4.5 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 µA —
Gate-Source Voltage (VGS) max ±20 V —
Total Gate Charge (Qg) 13 nC @ VGS=10 V —
Input Capacitance (Ciss) 870 pF @ VDS=15 V —
Power Dissipation (PD) at TA=25°C 2.5 W —
Power Dissipation (PD) at TC=25°C 30 W —
Kemasan SuperSO8 5x6 (PG-TDSON-8-6) PG-TSON-8-3 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +150 °C —
Status RoHS Compliant —
Drain-Source Voltage (VDS max) — 120 V
Continuous Drain Current (ID, Tc=25 C) — 194 A
Continuous Drain Current (ID, Ta) — 21 A
On-Resistance RDS(on) max — 3.4 mOhm @ VGS=10 V
On-Resistance RDS(on) typical — 3.0 mOhm @ VGS=10 V
Pembuangan Kuasa (TC=25°C) — 250 W
Power Dissipation (Ta) — 3 W
Suhu Operasi — -55 C to +175 C (junction)
Gate Drive Voltage (recommended) — 10 V (full RDS(on))
Configuration — Single N-channel, source-down
Packaging (suffix) — Tape & Reel (ATMA1)
RoHS — Compliant

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