ISC045N03L5SATMA1 vs ISC030N12NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC045N03L5SATMA1 sa pamamagitan ng Infineon at ISC030N12NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC045N03L5SATMA1 - 30V 4.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 ✓ NakahandaInfineon
ISC030N12NM6ATMA1 - 120V 194A OptiMOS 6 N-Ch MOSFET | Infineon
ISC030N12NM6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC045N03L5SATMA1 | ISC030N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | ISC045N03L5SATMA1 | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 5 / Trench | OptiMOS 6 (trench) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 63 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 µA | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | — |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Packhaging | SuperSO8 5x6 (PG-TDSON-8-6) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | — |
| Tindminan RoHS | Compliant | — |
| Drain-Source Voltage (VDS max) | — | 120 V |
| Continuous Drain Current (ID, Tc=25 C) | — | 194 A |
| Continuous Drain Current (ID, Ta) | — | 21 A |
| On-Resistance RDS(on) max | — | 3.4 mOhm @ VGS=10 V |
| On-Resistance RDS(on) typical | — | 3.0 mOhm @ VGS=10 V |
| Pwersang Pinahihigpit (TC=25°C) | — | 250 W |
| Power Dissipation (Ta) | — | 3 W |
| Temperature na Operasyon | — | -55 C to +175 C (junction) |
| Gate Drive Voltage (recommended) | — | 10 V (full RDS(on)) |
| Configuration | — | Single N-channel, source-down |
| Packaging (suffix) | — | Tape & Reel (ATMA1) |
| RoHS | — | Compliant |