ISZ056N03LF2SATMA1 vs ISC800P06LMATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ056N03LF2SATMA1 disebabkan oleh Infineon dan ISC800P06LMATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISZ056N03LF2SATMA1 ISC800P06LMATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series StrongIRFET 2 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V -60 V
Continuous Drain Current (ID) at Ta 16 A —
Continuous Drain Current (ID) at Tc 72 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) 2.35 V (typ) [DATA_NEEDED: VGS(th) typical value]
On-Resistance (RDS(on)) max at VGS=10V 5.6 mOhm —
On-Resistance (RDS(on)) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 52 W —
Gambaran Suhu Operasi -55 C to +175 C -55 C to +175 C (junction)
Kemasan PG-TSDSON-8 (PQFN 3.3x3.3 mm) PG-TDSON-8 (TDSON EP, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
FET Type — P-Channel
Continuous Drain Current (ID) at TC — 19.6 A
Power Dissipation (PD) at TC — 83 W
Technology — OptiMOS trench MOSFET
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
Kiraan Pin — 8
Lead-Free — Yes (per Infineon product page)
Aras MSL — 1 (per JEDEC J-STD-020)
Avalanche Rated — Yes (per Infineon datasheet)

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