ISZ072N06NM6ATMA1 vs ISZ023N06LM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ072N06NM6ATMA1 disebabkan oleh Infineon dan ISZ023N06LM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISZ023N06LM6ATMA1 - 60V 149A OptiMOS 6 N-Channel MOSFET | Infineon
ISZ023N06LM6ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISZ072N06NM6ATMA1 | ISZ023N06LM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Pembuangan Kuasa (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Kemasan | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TSDSON-8-34 (Surface Mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C ( Tj max 175C ) | — |
| Technology | OptiMOS 6 trench MOSFET | MOSFET (Metal Oxide) |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 |
| Series | — | OptiMOS 6 60 V |
| Part Number | — | ISZ023N06LM6 |
| Orderable Part Number | — | ISZ023N06LM6ATMA1 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 24 A |
| Pulsed Drain Current (ID, Tc) | — | 149 A |
| Power Dissipation (Tc) | — | 100 W |
| Suhu Operasi | — | -55C to +175C |
| Lead-Free | — | Yes |
| Configuration | — | Single |