ISZ072N06NM6ATMA1 vs ISZ023N06LM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISZ072N06NM6ATMA1 sa pamamagitan ng Infineon at ISZ023N06LM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISZ023N06LM6ATMA1 - 60V 149A OptiMOS 6 N-Channel MOSFET | Infineon
ISZ023N06LM6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISZ072N06NM6ATMA1 | ISZ023N06LM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Pwersang Pinahihigpit (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Packhaging | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TSDSON-8-34 (Surface Mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C ( Tj max 175C ) | — |
| Technology | OptiMOS 6 trench MOSFET | MOSFET (Metal Oxide) |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 |
| Series | — | OptiMOS 6 60 V |
| Part Number | — | ISZ023N06LM6 |
| Orderable Part Number | — | ISZ023N06LM6ATMA1 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 24 A |
| Pulsed Drain Current (ID, Tc) | — | 149 A |
| Power Dissipation (Tc) | — | 100 W |
| Temperature na Operasyon | — | -55C to +175C |
| Lead-Free | — | Yes |
| Configuration | — | Single |