K4A4G085WD-BCTD vs H5AN4G8NBJR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G085WD-BCTD disebabkan oleh Samsung Electronics dan H5AN4G8NBJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ AktifPengandingan Spesifikasi
| Parametr | K4A4G085WD-BCTD | H5AN4G8NBJR-PBC |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Die Generation | D-die | — |
| Density | 4 Gb | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Kadar Data | 2666 Mbps/pin | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Suhu Operasi | 0C to +85C | — |
| Kemasan | 78-ball FBGA | 78-ball FBGA |
| Ball Pitch | 0.8 mm | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | DDR4 (JEDEC-compatible) | — |
| Speed Class | DDR4-2666 (PC4-21300) | — |
| Bank Architecture | DDR4 bank-group architecture | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | — |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Density | — | 4 Gbit |
| Jenis Antaramuka | — | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Speed Grade | — | PBC |
| Clock Frequency | — | [DATA_NEEDED: Clock Frequency] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Normal Operating Case Temperature | — | 0C to 85C |
| Extended Temperature Range | — | up to 95C case (with increased refresh) |
| Lead Free | — | Yes |
| Boson Bebas | — | Yes |
| Refresh | — | 8n prefetch, standard/auto refresh per DDR4 JEDEC |