K4A4G085WD-BCTD vs H5AN4G8NBJR-PBC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WD-BCTD sa pamamagitan ng Samsung Electronics at H5AN4G8NBJR-PBC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G085WD-BCTD | H5AN4G8NBJR-PBC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Die Generation | D-die | — |
| Density | 4 Gb | — |
| Organisasyon | 512M x 8 | 512M x 8 |
| Rate ng Data | 2666 Mbps/pin | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Temperature na Operasyon | 0C to +85C | — |
| Packhaging | 78-ball FBGA | 78-ball FBGA |
| Ball Pitch | 0.8 mm | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | DDR4 (JEDEC-compatible) | — |
| Speed Class | DDR4-2666 (PC4-21300) | — |
| Bank Architecture | DDR4 bank-group architecture | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance status] | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Density | — | 4 Gbit |
| Uri ng Interface | — | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Speed Grade | — | PBC |
| Clock Frequency | — | [DATA_NEEDED: Clock Frequency] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Normal Operating Case Temperature | — | 0C to 85C |
| Extended Temperature Range | — | up to 95C case (with increased refresh) |
| Lead Free | — | Yes |
| Wala sa Halogen | — | Yes |
| Refresh | — | 8n prefetch, standard/auto refresh per DDR4 JEDEC |