K4A4G085WD-BCTD vs H5AN4G8NBJR-PBC 比較
詳細並排比較 K4A4G085WD-BCTD 由 Samsung Electronics 與 H5AN4G8NBJR-PBC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ 啟用中規格比較
| 參數 | K4A4G085WD-BCTD | H5AN4G8NBJR-PBC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Die Generation | D-die | — |
| Density | 4 Gb | — |
| 組織 | 512M x 8 | 512M x 8 |
| 資料速率 | 2666 Mbps/pin | — |
| 供應電壓 | 1.2 V | — |
| 工作溫度 | 0C to +85C | — |
| 封裝 | 78-ball FBGA | 78-ball FBGA |
| Ball Pitch | 0.8 mm | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | DDR4 (JEDEC-compatible) | — |
| Speed Class | DDR4-2666 (PC4-21300) | — |
| Bank Architecture | DDR4 bank-group architecture | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance status] | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Density | — | 4 Gbit |
| 介面類型 | — | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Speed Grade | — | PBC |
| Clock Frequency | — | [DATA_NEEDED: Clock Frequency] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Normal Operating Case Temperature | — | 0C to 85C |
| Extended Temperature Range | — | up to 95C case (with increased refresh) |
| Lead Free | — | Yes |
| 無鹵素 | — | Yes |
| Refresh | — | 8n prefetch, standard/auto refresh per DDR4 JEDEC |