K4A4G085WG-BCWE vs K4A4G045WD-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G085WG-BCWE disebabkan oleh Samsung Electronics dan K4A4G045WD-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G085WG-BCWE | K4A4G045WD-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| Saiz Ingatan | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Kadar Data | 3200 Mbps/pin | — |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Technology | D-die DDR4 | — |
| Kemasan | FBGA-78 (BCW) | TFBGA-78 (FBGA-78) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | Parallel (DDR4) | — |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh rate specification] | Self refresh supported (per Partstack listing) |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Density | — | 4 Gb |
| Organisasi | — | 1G x4 |
| Die Generation | — | D-die |
| Supply Voltage VDD | — | 1.2 V |
| Speed Grade / Data Rate | — | BCRC (2400 Mbps per Samsung product selection guide) |
| Number of Terminals | — | 78 |
| Self Refresh | — | Yes |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Clock Frequency | — | [DATA_NEEDED: CK frequency for BCRC bin] |
| Latensi CAS | — | [DATA_NEEDED: CL for BCRC bin] |
| Bank Architecture | — | DDR4 8 internal banks with bank groups |
| Lead Free Status | — | [DATA_NEEDED: lead-free status] |
| Packaging Option | — | [DATA_NEEDED: tape and reel quantity] |