K4A4G085WG-BCWE vs K4A4G085WE-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G085WG-BCWE disebabkan oleh Samsung Electronics dan K4A4G085WE-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G085WG-BCWE | K4A4G085WE-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| Saiz Ingatan | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Kadar Data | 3200 Mbps/pin | 2400 Mbps |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Technology | D-die DDR4 | — |
| Kemasan | FBGA-78 (BCW) | FBGA-78 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | Parallel (DDR4) | Parallel |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | [DATA_NEEDED: refresh rate specification] | 8n / 1X refresh (per JEDEC DDR4) |
| Status RoHS | Compliant | Compliant (per LCSC listing) |
| Packaging | Tray | — |
| Density | — | 4 Gbit |
| Organisasi | — | 512M x 8 |
| Clock Cycle Time (tCK) | — | 0.833 ns |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Core Voltage (VPP) | — | 2.5 V |
| Process Node Family | — | Samsung E-die |
| Bank Groups | — | 4n prefetch DDR4 architecture |
| Aras MSL | — | [DATA_NEEDED: Moisture Sensitivity Level] |