K4A4G085WG-BCWE vs K4A4G085WE-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WG-BCWE sa pamamagitan ng Samsung Electronics at K4A4G085WE-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A4G085WG-BCWE | K4A4G085WE-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| Laki ng Memory | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Rate ng Data | 3200 Mbps/pin | 2400 Mbps |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Technology | D-die DDR4 | — |
| Packhaging | FBGA-78 (BCW) | FBGA-78 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | Parallel (DDR4) | Parallel |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | [DATA_NEEDED: refresh rate specification] | 8n / 1X refresh (per JEDEC DDR4) |
| Tindminan RoHS | Compliant | Compliant (per LCSC listing) |
| Packaging | Tray | — |
| Density | — | 4 Gbit |
| Organisasyon | — | 512M x 8 |
| Clock Cycle Time (tCK) | — | 0.833 ns |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Core Voltage (VPP) | — | 2.5 V |
| Process Node Family | — | Samsung E-die |
| Bank Groups | — | 4n prefetch DDR4 architecture |
| Level ng MSL | — | [DATA_NEEDED: Moisture Sensitivity Level] |