K4A4G165WD-BCRC vs K4A8G165WB-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G165WD-BCRC disebabkan oleh Samsung Electronics dan K4A8G165WB-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G165WD-BCRC | K4A8G165WB-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 4 Gbit | — |
| Organisasi | 256M x 16 | — |
| Speed Bin | DDR4-2400 (BCRC) | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kemasan | FBGA-96 | 96-ball FBGA (PBGA96) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Process Generation | Samsung D-die | — |
| Jenis Antaramuka | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | Yes |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | Yes |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| Status RoHS | Lead free / RoHS Compliant | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Antaramuka | — | Parallel (DDR4 SDRAM bus) |
| Supply Voltage (VDD) | — | 1.2 V |
| Kadar Data | — | 2400 Mbps/pin (DDR4-2400) |
| Technology | — | CMOS, B-die 8Gb die |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |