K4A4G165WD-BCRC vs K4A8G165WB-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G165WD-BCRC sa pamamagitan ng Samsung Electronics at K4A8G165WB-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G165WD-BCRC | K4A8G165WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 4 Gbit | — |
| Organisasyon | 256M x 16 | — |
| Speed Bin | DDR4-2400 (BCRC) | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | FBGA-96 | 96-ball FBGA (PBGA96) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Generation | Samsung D-die | — |
| Uri ng Interface | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | Yes |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | Yes |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| Tindminan RoHS | Lead free / RoHS Compliant | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Laki ng Memory | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Interface | — | Parallel (DDR4 SDRAM bus) |
| Supply Voltage (VDD) | — | 1.2 V |
| Rate ng Data | — | 2400 Mbps/pin (DDR4-2400) |
| Technology | — | CMOS, B-die 8Gb die |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |