K4A8G085WB-BCPB vs K4A8G045WB-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BCPB disebabkan oleh Samsung Electronics dan K4A8G045WB-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung
K4A8G045WB-BCRC ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G085WB-BCPB | K4A8G045WB-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $4.10 | — |
| Jenis Ingatan | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | — |
| Memory Organization | 1G x 8 | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Max Clock Frequency | 1066 MHz | — |
| Max Access Time | 0.18 ns | — |
| Max Standby Current | 0.016 mA | — |
| Refresh Cycles | 8192 | 8192 |
| Technology | CMOS, 8Gb B-die | — |
| Kemasan | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length | 78-ball FBGA (PBGA78) |
| Number of Terminals | 78 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +85C | 0 C to 85 C |
| Antaramuka | DDR4 SDRAM parallel interface | CMOS, differential clock (CK/CK#) |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Operating Temperature Grade | Commercial (0C to 85C) | — |
| Density | — | 8 Gb |
| Organisasi | — | 2G x 4 |
| Speed | — | 2400 Mbps |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V |
| Process Technology | — | Samsung B-die |
| Maximum Supply Current | — | 211.7 mA |
| Terminals | — | 78 |
| Key DDR4 Features | — | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset |
| DLL Mode | — | Timing specified for DLL-enabled operation |