K4A8G085WB-BCWE vs H5AN8G8NCJR-UHC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BCWE disebabkan oleh Samsung Electronics dan H5AN8G8NCJR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4A8G085WB-BCWE K4A8G085WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCWE ✓ Aktif

Pengandingan Spesifikasi

Parametr K4A8G085WB-BCWE H5AN8G8NCJR-UHC
Merek Samsung Electronics SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $12.30 —
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Organisasi 1G x 8 1G x 8
Kadar Data 3200 Mbps —
Supply Voltage (VDD) 1.2 V 1.2 V
Suhu Operasi 0C to +85C [DATA_NEEDED: operating temperature range]
Kemasan 78-ball FBGA FBGA-78
Jenis Pemasangan Surface Mount Surface Mount (BGA)
Die Classification B-die —
Antaramuka DDR4 (SSTL12) —
Application Domain Server, industrial control, networking, embedded systems —
VREF AC-Noise Derating +/-1% of VDD included in timing deratings —
Status RoHS [DATA_NEEDED: RoHS compliance statement] —
Aras MSL [DATA_NEEDED: moisture sensitivity level] —
Package Body Size [DATA_NEEDED: package dimensions in mm] —
Speed Grade — DDR4-2400 (PC4-19200)
RoHS Code — Yes
REACH Compliance — Yes (per distributor record)
Lead-Free — Yes (family documented as Lead-Free & Halogen-Free)
Boson Bebas — Yes
Part Life Cycle Code — Active
Access Type — Synchronous, both clock edges (DDR)
Memory Configuration — Bank-group architecture DDR4
Die Revision — CJR (C-die family)
Manufacturer — SK hynix Inc.

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