K4A8G085WB-BCWE vs H5AN8G8NCJR-UHC 比較
詳細並排比較 K4A8G085WB-BCWE 由 Samsung Electronics 與 H5AN8G8NCJR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G085WB-BCWE | H5AN8G8NCJR-UHC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $12.30 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 組織 | 1G x 8 | 1G x 8 |
| 資料速率 | 3200 Mbps | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| 工作溫度 | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| 封裝 | 78-ball FBGA | FBGA-78 |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| Die Classification | B-die | — |
| 介面 | DDR4 (SSTL12) | — |
| Application Domain | Server, industrial control, networking, embedded systems | — |
| VREF AC-Noise Derating | +/-1% of VDD included in timing deratings | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance statement] | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Body Size | [DATA_NEEDED: package dimensions in mm] | — |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| RoHS Code | — | Yes |
| REACH Compliance | — | Yes (per distributor record) |
| Lead-Free | — | Yes (family documented as Lead-Free & Halogen-Free) |
| 無鹵素 | — | Yes |
| Part Life Cycle Code | — | Active |
| Access Type | — | Synchronous, both clock edges (DDR) |
| Memory Configuration | — | Bank-group architecture DDR4 |
| Die Revision | — | CJR (C-die family) |
| Manufacturer | — | SK hynix Inc. |