K4A8G165WB-BCRC vs K4A8G045WB Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCRC disebabkan oleh Samsung Electronics dan K4A8G045WB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BCRC | K4A8G045WB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM (B-die) |
| Saiz Ingatan | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Antaramuka | Parallel (DDR4 SDRAM bus) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Kadar Data | 2400 Mbps/pin (DDR4-2400) | 2133 Mbps |
| Technology | CMOS, B-die 8Gb die | — |
| Kemasan | 96-ball FBGA (PBGA96) | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40C to +95C | 0 C to +85 C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | Yes |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Density | — | 8 Gb |
| Organisasi | — | 2G x 4 |
| Tegangan Pemberi Arus | — | 1.2 V |
| Max Supply Current | — | 211.7 mA |
| Refresh Cycles | — | 8192 |
| Number of Terminals | — | 78 |
| Clocking | — | Differential clock (CK / CK#) |
| On-Die Termination | — | Yes (ODT pin) |
| Posted CAS | — | Yes |
| Programmable CWL | — | Yes |
| Internal (Self) Calibration | — | Yes |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |