K4A8G165WB-BCTD vs K4A8G165WB-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCTD disebabkan oleh Samsung Electronics dan K4A8G165WB-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ AktifSamsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G165WB-BCTD | K4A8G165WB-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $6.25 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | — |
| Kadar Data | 2666 Mbps | 3200 Mbps/pin |
| Supply Voltage (VDD) | 1.2 V | — |
| Suhu Operasi | 0C to +85C | 0C to +85C |
| Kemasan | 96FBGA | 96FBGA |
| Die Generation | B-die | — |
| Jenis Pemasangan | Surface Mount (BGA) | Surface Mount |
| Antaramuka | DDR4 (parallel, double data rate) | Parallel |
| Data Mask | Supported (DM per x16 lane) | — |
| ZQ Calibration | Supported | — |
| Dynamic On-Die Termination | Supported | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Status RoHS | Compliant (per JLCPCB listing: ROHS) | [DATA_NEEDED: RoHS compliance statement] |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL Level] | — |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Tegangan Pemberi Arus | — | 1.2 V |
| Access Time | — | 19 ns |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |